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Si2335DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.5
10
0.4
I D = 4.0 A
1
T J = 150 °C
T J = 25 °C
0.3
0.2
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0
2
4
6
8
0.4
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
12
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.3
0.2
0.1
0.0
- 0.1
I D = 250 μA
10
8
6
4
2
T A = 25 °C
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
600
2
1
T J - Temperature (°C)
Threshold Voltage
Duty Cycle = 0.5
0.2
0.1
Time (s)
Single Pulse Power
Notes:
P DM
0.1
0.05
0.02
t 1
t 2
1. Duty Cycle, D =
t 1
t 2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71314.
www.vishay.com
4
Document Number: 71314
S09-0130-Rev. B, 02-Feb-09
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